| 摘要 |
PROBLEM TO BE SOLVED: To enable a two-dimensional distribution of crystallization rate in a polycrystalline silicon film to be easily obtained in a short time in a production line. SOLUTION: A light flux of ultraviolet light to near ultraviolet light in a wavelength range of 260 nm to 450 nm is generated by a light source 1 to irradiate a substrate 5 placed on an XY stage 6 which is two-dimensionally movable, and a reflected light flux from the substrate 5 is collected and picked up by an image sensor 9 composed of a line sensor and others, whereby image data are generated. A change of a polycrystalline silicon film and an a-Si film in a refractive index n and an attenuation coefficient k with a change in a crystallization rate is detected as a reflective index change in the surface of the substrate.
|
