| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitive element where a ratio of a parasitic capacitance to a main capacitance is reduced. SOLUTION: First and second electrodes 11, 13 are formed closely to each other on one major side 2a of a dielectric board 2, 1st and 2nd holes 12, 14 are made closely to each other at the positions of the 1st and 2nd electrodes 11, 13 from the major side 2a to the other major side 2b of the dielectric board 2, a conductor is formed to inner side faces of the 1st and 2nd holes 12, 14 and they connect electrically to the 1st and 2nd electrodes 11, 13 to configure the capacitive element 10. Thus, decreasing a ratio of a parasitic capacitance to the main capacitance prevents deterioration of the high frequency characteristic of the element. |
