| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor memory device that prevents excessive necking of a storage node. SOLUTION: This method stage where an interlayer insulating film 102 is etched to form a contact hole 103 in it, a stage where a contact plug 104, connected to the lower part of the contact hole 103 with a semiconductor substrate, comprises an upper part surface which is lower relative to that between interlayer insulations is formed, a stage where a first conductive layer 105 is so formed as to be electrically connected to the contact plug 104 on the interlayer insulating film 102 along the topology of the contact hole 103, a stage where the contact hole 103 is completely filled as a material layer, a stage where a second conductive layer 108 is formed on the first conductive layer 105 while comprising the material layer, and a stage where a second conductive layer 108 and the first conductive layer 105 are etched to form a contact electrode. |
