| 摘要 |
<p>PROBLEM TO BE SOLVED: To uniformly correct to a practical level the residual defects in a shifter layer or the like which is transparent for exposure light of a phase shift mask, by determining the number of irradiation times of focused ion beams considering the etching amt. by the influences of an assist gas. SOLUTION: A substrate (phase shift mask) 480 to be corrected in which the position of defects and types and sizes of defects are identified by an inspecting device is mounted on a stage 413 of a focused ion beam device 410. At the same time, the data of the defects in the substrate 480 obtd. by the inspecting device is inputted in a defect data accumulating part 470. The information of the first defect is taken out from the defect data, and the number of irradiation times on the first defect is determined according to the outputted information. In this case, the number of irradiation times of focused ion beams is determined considering the etching amt. due to the influence of the assist gas. Then the second and succeeding defects are treated in the same way.</p> |
