发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To provide an MR element capable of applying a suitable lengthwise bias field to a magneto-sensitive film, even when the magnetic sensitive film is made thinner. SOLUTION: A magnetic sensitive film 11 responds to an externally applied magnetic field. Ferromagnetic-domain control film 21, 22 impress a lengthwise bias field on a magneto-sensitive film 11, when a direction in which sense current Is flows is set lengthwise. If the magnetic film thickness given by the product of a residual magnetization Br1 (Gauss) of the magneto-sensitive film 11 and its thickness THx (μm) is expressed by (x) (Gauss.μm), and the magnetic film thickness given by the product of a thickness THy (μm) of the ferromagnetic-domain control films 21, 22 and their residual magnetization Br2 (Gauss) is expressed by (y) (Gauss.μm), and furthermore, a magnetic film thickness of the ferromagnetic-domain control films 21, 22 defined considering a minimum field of the magneto-sensitive film 11 required for operation is set toα(Gauss.μm), then y>=-2x+αis satisfied.
申请公布号 JP2000030223(A) 申请公布日期 2000.01.28
申请号 JP19980193362 申请日期 1998.07.08
申请人 TDK CORP 发明人 SATO JUNICHI;HIROMATSU FUMIHIRO
分类号 G11B5/39;H01F10/32;(IPC1-7):G11B5/39 主分类号 G11B5/39
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