发明名称 |
POWER SEMICONDUCTOR MODULE |
摘要 |
PROBLEM TO BE SOLVED: To make it possible to radiate heat surely from a power semiconductor chip in a power semiconductor module. SOLUTION: A power semiconductor module includes a metallic base 2, an insulating plate 4 put on the metallic base 2 and having wiring patterns 8a and 8b on one face while copper foil is applied to the other face, and a power semiconductor chip 6 soldered to one wiring pattern 8a. Then, the power semiconductor module is mounted using a highly heat conductive adhesive for bonding the other face 8c of the insulating board 4 to the metallic base 2. In addition, a first solder bump as large as or larger than the power semiconductor chip 6 is provided on the other face 8c of the insulating plate 4 under the power semiconductor chip 6. |
申请公布号 |
JP2000031357(A) |
申请公布日期 |
2000.01.28 |
申请号 |
JP19980208664 |
申请日期 |
1998.07.08 |
申请人 |
SANSHA ELECTRIC MFG CO LTD |
发明人 |
AOYAMA MASAHIRO;FUJITA SUMIO |
分类号 |
H01L23/36;H01L21/60;H01L25/07;H01L25/18 |
主分类号 |
H01L23/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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