发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To make it possible to radiate heat surely from a power semiconductor chip in a power semiconductor module. SOLUTION: A power semiconductor module includes a metallic base 2, an insulating plate 4 put on the metallic base 2 and having wiring patterns 8a and 8b on one face while copper foil is applied to the other face, and a power semiconductor chip 6 soldered to one wiring pattern 8a. Then, the power semiconductor module is mounted using a highly heat conductive adhesive for bonding the other face 8c of the insulating board 4 to the metallic base 2. In addition, a first solder bump as large as or larger than the power semiconductor chip 6 is provided on the other face 8c of the insulating plate 4 under the power semiconductor chip 6.
申请公布号 JP2000031357(A) 申请公布日期 2000.01.28
申请号 JP19980208664 申请日期 1998.07.08
申请人 SANSHA ELECTRIC MFG CO LTD 发明人 AOYAMA MASAHIRO;FUJITA SUMIO
分类号 H01L23/36;H01L21/60;H01L25/07;H01L25/18 主分类号 H01L23/36
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