发明名称 MANUFACTURING FACILITIES FOR SEMICONDUCTOR DEVICE, PATTERN FORMATION OF SEMICONDUCTOR DEVICE USING THE SAME, AND PHOTORESIST FOR SEMICONDUCTOR MANUFACTURE TO WHICH THE FACILITY IS APPLIED
摘要 <p>PROBLEM TO BE SOLVED: To provide the manufacturing facilities for semiconductor devices which form a pattern of preferred size, a pattern forming method for the semiconductor devices, and a photoresist for semiconductor manufacturing which utilize them. SOLUTION: Manufacturing facilities 30 are equipped with a photoresist coating part 36 which coats a wafer with specific photoresist, a development part 4 which forms a photoresist pattern on the wafer exposed after being coated with the photoresist, and a cross-linking reaction part which submits the photoresist pattern to cross-linking reaction so as to provide a stable flow in a flow process of the photoresist pattern. Furthermore, a stage for coating the wafer with the photoresist, a stage for exposing the photoresist while a photomask is arrayed, a stage for forming the photoresist pattern on the wafer, a stage for submitting the photoresist pattern to cross-linking reaction, and a stage for subjecting to flow baking of the photoresist pattern after the cross- linking reaction are included.</p>
申请公布号 JP2000031001(A) 申请公布日期 2000.01.28
申请号 JP19990170904 申请日期 1999.06.17
申请人 SAMSUNG ELECTRON CO LTD 发明人 JEOUNG GYU-CHAN;CHOI KWANG-SEOK;TEI SHINKO;KIN EIZEN;RI KO
分类号 H01L21/027;G03F7/20;G03F7/40;H01L21/308;(IPC1-7):H01L21/027 主分类号 H01L21/027
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