| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS(complementary metal oxide silicon) image sensor which can perform high-speed operations and performs a self-alignment silicide step while minimizing the change of existing operations. SOLUTION: A CMOS image sensor includes a photosensitive area, on which embedded photodiodes(BPD) are formed, photodiodes, multiple transistors which are electrically coupled, gates exclusive of the photosensitive area, a silicide film 325 formed on a high-density diffusion area and multiple insulating patterns provided through patterning of an insulating layer. The multiple insulating patterns include the insulating spacers formed on sidewalls of gates, which are given to each of the multiple transistors and protective layers formed on the photosensitive area in the gates, on the sidewalls of the adjacent gates and on the photosensitive area.
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