| 摘要 |
PROBLEM TO BE SOLVED: To form a flat-spin-on-glass layer with superior productivity on the surface of a semiconductor substrate having irregularities. SOLUTION: In this manufacturing method, spin-on-glass, which is applied on the surface of a substrate having irregularities formed on a semiconductor substrate, is baked and flattened, the spin-on-glass is formed thick at the recessed part of the irregularities, and the spin-on glass is formed thin on the protruding part of the irregularities. At his time, a first-stage roller (81) is at 150±50 deg.C, second-stage (82) is at 250±50 deg.C, a third-stage roller (83) is at 300±50 deg.C, a fourth-stage roller (84) is at 350±70 deg.C, a fifth-stage roller (85) is at 350±70 deg.C, and a sixth-stage roller (86) is at 350±70 deg.C. The constitution is such that the intervals between the rollers from the first stage to the sixth stage become gradually narrow.
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