| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a ROM of a NOR structure capable of cutting off a leakage current path, also reading data at a high rate by shortening a charge/ discharge time, further, reducing power consumption and preventing a power noise from occurring. SOLUTION: For instance, when a sensation current is fed from a main bit line selecting circuit 150 to a main bit line MBL1 and a memory cell M11 is read out by grounding a ground bit line GBL1 through a ground bit line selecting circuit 130, the same bias current as the sensation current is fed to a main bit line MBL2 and a ground bit line GBL2 adjacent to the bit lines MNL1, GBL1 from the selecting circuits 150, 130.</p> |
