| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a piezoelectric device which compensates the hysteresis of a dielectric crystal substrate and a process for producing the same. SOLUTION: This piezoelectric device is produced by epitaxially growing a dielectric crystal thin film 2 which polarizes to a direction opposite to the direction of the polarization and has high curie temp. higher than epitaxial growth by a liquid phase epitaxy on the one main surface of a dielectric crystal substrate 1 polarized in one direction. The dielectric crystal substrate 1 is, for example, an LiNbO3 single crystal z plate doped with MgO and the dielectric crystal thin film 2 is, for example, an LiNbO3 thin film.</p> |
