发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent dimples from being left on the surface of an isolation oxide film formed in a trench. SOLUTION: A layer 14 of softening material such as boron which decreases the glass softening point is formed as buried in a CVD oxide film 6 as deep as prescribed by implantation of ions or thermal oxidation carried out in vapor phase, liquid phase or solid phase. Thereafter, the CVD oxide film 6 is thermally treated so as to melt its part adjacent to a non-close contact surface 5, whereby a dimple 12 is filled up. By this setup, the surface of the CVD oxide film 6 is turned smooth, and an isolation oxide film free from dimples 12 is formed.
申请公布号 JP2000031263(A) 申请公布日期 2000.01.28
申请号 JP19980192908 申请日期 1998.07.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 YASUMA MASATOSHI
分类号 H01L21/76;(IPC1-7):H01L21/76 主分类号 H01L21/76
代理机构 代理人
主权项
地址