| 摘要 |
PROBLEM TO BE SOLVED: To improve a semiconductor device in transistor characteristic, by a method wherein the element isolation film of the semiconductor device is lessened in crystal defect and interface level so as to restrain a leakage current from occurring in it, and a rapid thermal annealing is carried out so as not to affect an impurity profile. SOLUTION: A well is provided to a semiconductor substrate (S101), an element isolation insulating film is formed by thermally oxidizing the surface of the semiconductor substrate (S102), a guard ring is formed under the element isolation insulating film by implanting impurities (S103), and then the semiconductor substrate is subjected to an RTA(Rapid Thermal Annealing) where the substrate is rapidly thermally treated at a higher temperature than that at which the above thermal oxidation process is carried out (S104). Thereafter, a MOS transistor and a capacitor are formed by injecting impurities into the semiconductor substrate (S105, S106), then a hydrogen sintering process is carried out as an interface level reduction treatment (S107). Crystal defects are repaired by RTA without affecting an impurity profile, and a reduction is made in interface level through an interface level reduction treatment, whereby a leakage current occurs less in an element isolation insulating film. |
