| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a contact hole in a semiconductor device. SOLUTION: The inventive method comprises a step for forming a first insulation film on the front face of a semiconductor substrate 100 having a plurality of gate stacks, a step for forming an interlayer insulation film 154 covering the first insulation film on the front face of the semiconductor substrate, a step for forming a contact hole between the gate stacks by etching the interlayer insulation film 154, a step for forming a second insulation film on the front face of the semiconductor substrate 100, a step for forming a spacer on the opposite side walls in the contact hole by etching back the second insulation film, and a step for etching the first insulation film to expose the semiconductor substrate between the gate stacks using the spacer and the interlayer insulation film. |
