| 摘要 |
PROBLEM TO BE SOLVED: To form a thin film of large and uniform grains and obtain a device of a high relative permittivity suitable for fine processing by transforming a base for the thin film into amorphous by implanting ions and then crystallizing it by heat treatment. SOLUTION: In order to transform the surface of a lower electrode 102 into amorphous, argon which is inert gas is ionized and is implanted in the amount of 5×1015 cm-2 with the acceleration energy of 40 keV. For smaller grains of a thin film, the temperature of the substrate is increased at the rate of 200 deg.C/sec, to 950 deg.C by instantaneous annealing equipment with a halogen lamp. Then, the substrate is kept as it is for 20 sec. and is left to cool in nitrogen gas at the flow rate of 101/min. As for a ferroelectric film 104, for example, lead zirconate titanate having a perovskite crystal structure is formed in the thickness of 0.5 μm by the sol-gel method. Then, the film is formed into a desired pattern by photolithography and is sintered at 600 deg.C for an hour. |
