摘要 |
<p>PROBLEM TO BE SOLVED: To provide the method for manufacturing a semiconductor element with which the efficient formation of conductor plugs and the minimization of the steps of interlayer insulating films can be realized. SOLUTION: A method for manufacturing semiconductor element includes a step of forming a prescribed conductor film on an insulating film, while filling up a contact hole with the conductor film on a semiconductor substrate 220, a step of rotating the substrate 220 carrying the conductor film, and a stet of etching the conductor film in such a state that the film does not exist on the insulating film but exists only in the contact hole, by supplying an etchant in which at least one or more oxidizing agents selected from among H2O2, O2, IO4, BrO3, ClO3, S2O8, KIO3, H5IO6, KOH, and HNO3, at least one or more reinforcing agents selected from among HF, HN4OH, H3PO4, H2SO4, NH4F, and HCl, and a buffer agent are mixed at a prescribed mixing ratio onto the rotated substrate 220.</p> |