发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To lessen a wiring in inter-wiring capacitance. SOLUTION: In devices 10 and 20, interlayer films 103 and 203 covering optional wirings 102 and 202 provided to a board or films 101 and 201, metal films 104 and 206 provided inside the interlayer films 103 and 203, and wiring groups 3 and 4 of the same wiring pattern or different patterns provided to a first interlayer film region 1 and a second interlayer film region 2 which are divided with the metal films 104 and 206 are separately provided.
申请公布号 JP2000031272(A) 申请公布日期 2000.01.28
申请号 JP19980197088 申请日期 1998.07.13
申请人 NEC CORP 发明人 NAGASE MASATOSHI
分类号 H01L21/28;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/321 主分类号 H01L21/28
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