| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, which can form a wiring pattern with a width which is less than the limit of photolithography, without increasing the number of the times, photolithography conducted. SOLUTION: In this manufacturing method, a first wiring pattern is formed on a first insulating film 100 formed on a semiconductor substrate. Then, a first opening part 105, which penetrates the first wiring pattern for a contact hole, is formed in a second insulating film 102 formed on the semiconductor substrate including the first wiring pattern. At the same time, a second opening part 103 which divides the first wiring pattern is formed. Then, after a third insulating film 106 is filled in the opening 103, a second wiring pattern 7 is formed on the second insulating film.
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