| 摘要 |
PROBLEM TO BE SOLVED: To improve a yield of a thermal processing for raised productivity by forming a dummy wafer for semiconductor thermal process of a glass carbon base material comprising young's modulus of specific range. SOLUTION: As a glass-like carbon, an organic sulfonic acid is added to a thermo-setting resin, which is cold-polymerized to provide a fluid polymer and injected in a mold in fluid state, and then temperature is gently raised for setting to form a molded body. The molded body is raised, in temperature, to 800-1200 deg.C at a specified speed for baking/carbonization, and its surface is worked, then further heated to 2000-2500 deg.C for purifying process. The glass- like carbon base material obtained by this method has thermal-impact resistance temperature of 700 deg.C or above while Young's modulus being 2530 GPa, applicable for preventing crack or breakage of the base material. The glass-like carbon base material has no grain boundary, and the one with maximum pore size 0.1μm or with rate of perforation 0.01% or less can be manufactured. Divergence of carbon fine particles, etc., is not feared.
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