FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the sheet resistance from increasing due to aggregation of metal silicide layer in a high integration semiconductor device where diffusion layer resistance, and the like, are decreased by employing the metal silicide layer. SOLUTION: A metal silicide layer 7 is irradiated with hydrogen active species (H*) after formation in order to remove oxygen and carbon from the surface and the interior of the metal silicide layer 7.