| 摘要 |
PROBLEM TO BE SOLVED: To extend memory time and life and increase the number of writings and make easy control of the permittivity by disposing a silicon nitride film partially between a substrate and a ferroelectric capacitor. SOLUTION: A silicon oxide film 202 is formed in the thickness of 1 μm or about on the surface of a semiconductor substrate 201 made of silicon or the like and then is formed with a window by photo etching, After that, a silicon nitride film 203 is formed in the thickness of 1 μm or about by CVD. The nitride film 203 is also formed with a window by photo etching to form a contact hole which reaches the base silicon substrate 201. Then, a first electrode 204, a first ferroelectric crystal 205, a first amorphous ferroelectric 206 and a second electrode 207 are formed in order. The silicon nitride film 203 is for preventing the increase in the level density in the interface between silicon and the silicon oxide film at the time of oxygen annealing. |
