| 摘要 |
PROBLEM TO BE SOLVED: To realize etching without the effects of the abnormal material by the deposition of reaction product and without the etching-speed difference between roughness and finesses patterns in the film to be etched, which can perform high-selective-ratio etching for photoresist. SOLUTION: In this etching method, a pair of electrodes 7 are arranged in a processing container 1 so as to face each other, and Cl2 and BCl3 introduced as the main processing gas into the processing container 1. In this gas, the deposit-based gas, including C, H, and F bases such as CHF3 gas or CF 4 gas, is added. The pulse-wave modulated high frequency voltage is applied on a pair of electrodes, which support an etching sample 6 to be etched, and plasma is generated, so that the sample to be etched is etched. |
