| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a highly reliable high quality semiconductor storage device, in which the occurrence of short circuits between storage devices is prevented. SOLUTION: A method for manufacturing a semiconductor device having a switch element and a charge storing element includes a step of forming prescribed contact and wiring by forming a first insulating film on a MOS transistor after the transistor is formed on a silicon substrate, a step of forming a second insulating film having a thickness larger than the height of storages electrodes 13 on the wiring and engraved sections into the second insulating film for forming the storage electrodes 13, and a step of forming a first conductive film composed of a poly-Si film for forming plate electrodes 15, so as to fill up the engraved sections and providing openings 15 for forming the storage electrodes 13 through the first conductive film. The method also includes a step of forming contact holes 18 in the bottom sections of the openings 16 after forming capacitor insulating films 17 on the internal surfaces of the openings 16 and a step of forming the storage electrodes 13 by forming a second conductive film, in such a way that the conductive film can fill up the contact holes 18 and openings 16. |
