发明名称 SEMICONDUCTOR PRODUCTION DIFFUSION FACILITY FOR FORMING AIR CURTAIN AND CONTROL METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor production diffusion facility for forming an air curtain, and a control method therefore, in which heat loss in a diffusion furnace can be prevented by blocking hot air flow leaking to the outside. SOLUTION: The semiconductor production diffusion facility for forming an air curtain comprises an air curtain unit 6 for ejecting gas to traverse an inlet/outlet 3, and a control section 7 therefor. After an air curtain 5 is formed at the inlet/outlet, a wafer boat 2 and a wafer 1 are unloaded sequentially. Subsequently, next wafer 1 being thrown into a diffusion process is loaded to the wafer boat 2 thence into a diffusion furnace 4 before the air curtain 5 disappears eventually. Consequently, not only the uniformity of a film being formed on a semiconductor element and the durability of diffusion furnace are enhanced but also the productivity and yield of semiconductor element are enhanced by shortening the temperature compensation time significantly.</p>
申请公布号 JP2000031077(A) 申请公布日期 2000.01.28
申请号 JP19990176686 申请日期 1999.06.23
申请人 SAMSUNG ELECTRON CO LTD 发明人 NAN KIKIN;LEE YANG-GOO
分类号 H01L21/22;B65G49/00;C30B31/12;H01L21/00;(IPC1-7):H01L21/22 主分类号 H01L21/22
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