SWITCHED CONNECTION FILM AND ITS MANUFACTURE, MAGNETO- RESISTANCE EFFECT ELEMENT USING THE FILM, AND THIN-FILM MAGNETIC HEAD USING THE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a switched connection film which can generate a large exchange anisotropic magnetic field when using antiferromagnetic substance including an element X (X is an element of the platinum group) and Mn for an antiferromagnetic layer and a method for manufacturing such a film, and also provide a magneto-resistance effect element using the switched connections bonding film and a thin-film magnetic head using the magneto-resistance effect element. SOLUTION: An antiferromagnetic layer 4 is formed of X-Mn (X is an element of the platinum group). The lattice constant of the antiferromagnetic layer 4 is set larger than that of a fixed magnetic layer 3. By heat treatment, therefore, the crystal structure of the antiferromagnetic layer 4 is transformed from an irregular lattice state to a regular lattice state, thereby obtaining a larger exchange anisortropic magnetic field.