| 摘要 |
PROBLEM TO BE SOLVED: To improve the accuracy of connection between resist patterns, which are patterned by different lithography technologies of a lithography system which adopts lithographic technologies in combination. SOLUTION: An inspection pattern PQS, consisting of a 1st rectangular inspection pattern P1 which is patterned on a semiconductor wafer SW through a photolithography technology and a 2nd frame-shaped inspection pattern P2, which is pattern on the semiconductor wafer SW by an electron-beam lithography technology and arranged around the 1st inspection pattern P1, is used to inspect the matching of both 1st and 2nd resist patterns. |
