发明名称 SEMICONDUCTOR DEVICE AND PRODUCTION THEREOF
摘要 PROBLEM TO BE SOLVED: To suppress fluctuation in the lifetime of wiring by feeding a wiring formed on a substrate with a current at a current density of specified level or above and arranging the generating conditions of void in the wiring thereby reducing variance of the accumulated failure rate caused by the void. SOLUTION: A lower layer wiring 12 and an upper layer wiring 14 are formed on an insulating substrate 11 and connected through a plug 13 filling a via hole on the cathode side. The lower layer wiring 12 is then fed with a current at high current density of 1×106 A/cm2 or above and micro bores, i.e., voids 21, or nuclei thereof are generated in the lower layer wiring 12. Subsequently, generating conditions of void 21 are arranged such that only the void 21 are grown and enlarged even under actual use conditions, i.e., low acceleration conditions, thus reducing variance of accumulated failure rate caused by the void 21. According to the method, fluctuation in the lifetime of wiring can be suppressed.
申请公布号 JP2000031142(A) 申请公布日期 2000.01.28
申请号 JP19980201401 申请日期 1998.07.16
申请人 FUJITSU LTD 发明人 SUZUKI TAKASHI
分类号 H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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