| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor having a good drain current-gate voltage characteristic and a manufacturing method thereof. SOLUTION: A channel layer 14 formed on a base substrate 10, where the taper angle of the section of the end part is 10-45 deg., a gate electrode 18 which is formed on the base substrate 10 and channel layer 14 and intersects the channel layer 14, and source/drain regions 22 formed on the channel layer 14 at both sides of the gate electrode 18 are constituted.
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