| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an MOS transistor, which suppresses punch-through current and avoids increasing the source drain junction capacitance and a manufacturing method thereof. SOLUTION: A first conductivity type semiconductor substrate 10, having a channel forming region, a gate insulation film 20 formed on the upper layer of the channel forming region, a gate electrode 30a formed on the upper layer of the gate insulation film 20, a second conductivity-type source drain region 13 which is formed in the semiconductor substrate 10 at both sides of the gate electric 30a and connected to the channel forming region, a first conductivity- type punch-through blocking layer 11 formed in the semiconductor substrate 10 at the channel forming region, and a first conductivity-type region 14 which is formed below the junction plane of the source drain region 13 and has an effective first conductivity type carrier concn. lower than that of the punch- through blocking layer 11 are constituted.
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