| 摘要 |
PROBLEM TO BE SOLVED: To improve a residual polarization and to eliminate a film peeling at a dielectrics, by allowing the element ratio constituting lattice point occupied by at least two elements in a dielectrics to be different from the dielectrics center part at least near one electrode of the two electrodes. SOLUTION: On a first inter-layer insulating film 102 formed on a semiconductor substrate 101 where an active element is formed, a Pt is formed to form a lower part electrode 103. A dielectrics film 104, a dielectrics film 105, and a dielectrics film 106 are formed. A Pt film is formed to be an upper electrode 107. A silicon dioxide film is formed to be a second inter-layer insulating film 108, then an Al wiring layer 109 is formed, and after etching, a protective film 110 is formed. No lattice matching is sacrificed in a dielectrics device like this, resulting in elimination of film-peeling and constitution of a composition ratio excellent in polarizing characteristics at the center part of a dielectrics. Therefore, residual polarization Pr is improved.
|
