| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing a MOS semiconductor device with a lesser number of processes at a low equipment cost, wherein a silicon semiconductor wafer can be accurately evaluated. SOLUTION: An oxide film 31 is formed on the surface of a silicon semiconductor wafer 30, and then metal is evaporated thereon through a first metal mask 10. Some of electrodes 32 and guard electrodes 33 are formed, metal is evaporated through a second metal mask different from the first metal mask 10, and all the guard electrodes 33 are completely formed.
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