| 摘要 |
PROBLEM TO BE SOLVED: To obtain an embedded wiring, having the high yield rate and the high reliability by correcting defects, when a wire embedding groove is formed in the semiconductor manufacturing method and forming the groove which has a specified depth. SOLUTION: In this manufacturing method, a defect 4, wherein resist is not developed on a resist pattern 3 forming a wiring embedding groove 5 is formed in an interlayer insulating film 2, in the wiring forming process using damascene method. Thereafter, when foreign matters 6 and 7 are present in the groove etching, the specified grooves are not formed. Then, a resist pattern 11 and the foreign matter defects are removed by a process, which selectively embeds organic compound 9 in the wiring embedding groove 5 and an organic repaired film 10, a process, which forms a resist pattern 11 for forming the wiring embedding groove 5 again, and a process, which etches the interlayer insulating film and the organic repaired film 10 at the same time.
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