| 摘要 |
PROBLEM TO BE SOLVED: To adjust input/output capacitance of a semiconductor device meeting the maximum and minimum standards or a customer's request. SOLUTION: On the main surface of a semiconductor substrate 1, a thick silicon oxide film 2 which functions as an element isolation region is formed and a first electrode 6 is formed on the silicon oxide film 6 in a peripheral circuit region. The first electrode 6 is formed simultaneously with a gate electrode 4 of a MISFET Qs for memory cell selection. In addition, the first electrode 4, the substrate 1 which is a second electrode, and silicon oxide film 2 held between the electrode 6 and substrate 1 constitute a parallel plate capacitance element CA. Moreover, the first electrode 6 is connected electrically connected to a bonding pad BP of a third-layer wiring M3. The selection whether or not the electrode 6 is connected to the bonding section BP1 of the bonding pad BP is performed, by changing the pattern of the metal switch section BP2 of the bonding pad BP. |
