| 摘要 |
PROBLEM TO BE SOLVED: To allow a fine machining with both a ferroelectrics film and a lower part electrode, by providing a structure where a part or the entire of the ferroelectrics film is embedded in an inter-layer insulating film formed at the upper part of a transistor. SOLUTION: A ferroelectrics capacitance comprises a first ferroelectrics film 9 embedded in a lower part electrode 8 and a second inter-layer insulating film 7 through a contact plug 5 electrically connected to a source region, and an upper part electrode 11 and a second ferroelectrics film 10 formed on the first ferroelectrics film 9 and the second inter-layer insulating film 7. For example, one memory cell comprises one MOS transistor and one ferroelectrics capacity. The first ferroelectrics film 9 and the lower part electrode 8 are so formed as to be embedded in an opening formed at the inter-layer insulating film 7, while the lower part electrode 8 covers the entire of the bottom surface and the side surface of the embedded ferroelectrics film. Thus, a semiconductor storage device comprising a fine ferroelectrics capacity is allowed. |
