发明名称 WET ETCHING DEVICE FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND WET ETCHING METHOD FOR SEMICONDUCTOR ELEMENT USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a device and etching method therefor with which the controllability and productivity of an etching process are improved by having the etching rate improved, while the concentration of the etchant used is maintained constant during the etching process. SOLUTION: A wet etching device is provided with a bath 20, which can store a liquid chemical diluted with deionized water for wet etching of a specific film of semiconductor element and has an opened top, a heater 22 which can heat the liquid chemical stored in the bath 20, and a cover 24 which has a cooling water line 28 capable of condensing the deionized water evaporated by means of the heater 22 and covers the opened top of the bath 20.</p>
申请公布号 JP2000031113(A) 申请公布日期 2000.01.28
申请号 JP19990176690 申请日期 1999.06.23
申请人 SAMSUNG ELECTRON CO LTD 发明人 KYO RYUU;NIN KOHIN
分类号 H01L21/306;B05D1/00;C23F1/02;H01L21/00;H01L21/302;H01L21/311;H01L21/3213;H01L21/461;(IPC1-7):H01L21/306 主分类号 H01L21/306
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