发明名称 Selective metallization of e.g. ceramic, glass or plastic, e.g. for circuit board or electromagnetically screened housing, comprising mechanically depositing seeds on a rough substrate surface and then chemical plating
摘要 A selective metallization process, comprising mechanical deposition of seeds on a rough substrate surface and then chemical metal plating, is new. Preferred Features: The substrate surface has an average roughness depth of 0.01-100 microns , achieved by sand blasting or plasma or chemical etching. The seed material has a lower hardness than the substrate and consists especially of copper, silver, gold, nickel or palladium. The seeds are applied by linear, vibrational or rotational frictional contact with the substrate surface, especially automatically using a numerically controlled (NC) machine. An exchange reaction may be carried out using a more noble metal, especially silver, gold or platinum, prior to plating. The plated metal may be electrolytically thickened especially with copper, nickel or tin.
申请公布号 DE19833593(A1) 申请公布日期 2000.01.27
申请号 DE19981033593 申请日期 1998.07.25
申请人 DAIMLERCHRYSLER AG 发明人 VOIT, GABRIELE;OSTWALD, ROBERT
分类号 C23C18/16;C23C18/18;C23C18/22;C23C18/30;H05K3/10;H05K3/18;H05K3/38;(IPC1-7):C23C18/30;C23C18/54;C25D5/54 主分类号 C23C18/16
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