发明名称 |
SPUTTERING TARGET AND PART FOR THIN FILM-FORMING APPARATUS |
摘要 |
A sputtering target which is prepared by using a high purity copper alloy characterized in that it has Na and K contents respectively of 0.5 ppm or less, Fe, Ni, Cr, Al and Ca contents respectively of 2 ppm or less, an oxygen content of 5 ppm or less, U and Th contents respectively of 1 ppm or less and a Mg content of 0.02 to 4 wt.% and that the remainder obtained by excluding the gaseous components and Mg from the target has a copper content of 99.99% or more, and a part for a thin film-forming apparatus prepared by using the high purity copper alloy. The sputtering target and the part for a thin film-forming apparatus have a reduced wiring resistance and excellent resistance to electromigration and oxidation, and can be used for forming a wiring film having excellent uniformity in film composition and film thickness.
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申请公布号 |
WO0004203(A1) |
申请公布日期 |
2000.01.27 |
申请号 |
WO1999JP03796 |
申请日期 |
1999.07.14 |
申请人 |
JAPAN ENERGY CORPORATION;TAKAHASHI, KAZUNARI;MIYASHITA, HIROHITO |
发明人 |
TAKAHASHI, KAZUNARI;MIYASHITA, HIROHITO |
分类号 |
C22C9/00;C23C14/34;C23C14/56;H01L21/285;(IPC1-7):C23C14/34 |
主分类号 |
C22C9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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