Thin film structure, e.g. a thin film transistor structure for an active matrix LCD, is produced by thermally flowing a photosensitive masking layer over under-etched layer flanks prior to etching an underlying layer

摘要

A thin film structure production process comprises thermal flowing of a photosensitive masking layer (25) over under-etched layer flanks prior to etching an underlying layer (23). Production of a thin film multilayer structure, in which two or more successively applied layers are structured by etching with a common photosensitive masking layer, comprises: (a) etching the layer immediately below the photosensitive layer (25) such that under-etching results; (b) thermally treating the structure so that the photosensitive layer flows over and completely covers the sides of the etched layer (26, 27); and (c) etching the underlying layer (23).