| 摘要 |
<p>To improve the efficiency of UV erasing in a non-volatile memory, there is proposed to carry out the erase step at an elevated temperature, for example, a temperature lying between 200 and 300 °C. In this way a decrease of about 0.5 volt of the threshold voltage of the erased cell may be obtained compared to a standard UV erasure. This makes it also possible to lower the supply voltage.</p> |
