METHOD FOR GROWING SiC MONOCRYSTALS

摘要

The invention relates to a method for growing at least one silicon carbide (SiC) monocrystal (60) by sublimation of an SiC source material (30). According to said method, silicon (Si), carbon (C) and an SiC seed crystal (40) are introduced into a growing chamber (50). Thereafter the SiC source material (30) is produced from the silicon and the carbon in a synthesis step which occurs prior to the actual growing of the crystal. The SiC monocrystal (60) is grown immediately after the synthesis step. A carbon powder (20) having a mean particle diameter greater than 10 mu m is used as carbon.