| 摘要 |
<p>A sputtering target which is prepared by using a high purity copper alloy characterized in that it has Na and K contents respectively of 0.5 ppm or less, Fe, Ni, Cr, Al and Ca contents respectively of 2 ppm or less, an oxygen content of 5 ppm or less, U and Th contents respectively of 1 ppm or less and a Mg content of 0.02 to 4 wt.% and that the remainder obtained by excluding the gaseous components and Mg from the target has a copper content of 99.99% or more, and a part for a thin film-forming apparatus prepared by using the high purity copper alloy. The sputtering target and the part for a thin film-forming apparatus have a reduced wiring resistance and excellent resistance to electromigration and oxidation, and can be used for forming a wiring film having excellent uniformity in film composition and film thickness.</p> |
