SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device is provided to minimize a semiconductor device by using a fuse layer cut by a beam irradiation to control a redundancy circuit. CONSTITUTION: A semiconductor device comprises: a first insulated layer(2); a fuse layer(3); a pseudo fuse layer(7); a second insulated layer(4); and a protection film(6). The fuse layer is extended toward one direction on the first insulated layer and cut by a beam irradiation in order to control a redundancy circuit. The pseudo fuse layer is contacted to at least one side of the fuse layer on the first insulated layer. The second insulated layer covers the fuse layer and the pseudo fuse layer. The protection film is formed on the second insulated layer. An interval of the fuse layer is less than 4 micrometer or 4.5 to 5.5 micrometer.