发明名称 PLASMA PROCESSING APPARATUS AND METHOD
摘要 PURPOSE: A plasma processing apparatus and a plasma processing method are provided to generate a magnetic field micro wave plasma of a high uniformity and to have excellent fine processing performance. CONSTITUTION: The plasma processing apparatus comprises a vacuum container(2) which has a vacuum ventilation equipment, a material gas supply equipment, a non-process sample install equipment and a high frequency power supply equipment,. The plasma processing apparatus plasmarizes the material gas in the vacuum container(2) to perform a surface process of the non-process sample(6). The equipment forming the plasma is composed of an electromagnetic wave supply equipment and a magnetic field generating equipment. The plasma processing apparatus comprises a flat panel(5) which is disposed in parallel the non-process sample. An introduction of the electromagnetic wave to the vacuum container is performed from the flat panel(5). An interval between the flat panel(5) and the non-process sample(6) is set in 30mm or in half a diameter of either of the non-process sample(6) and the flat panel(5).
申请公布号 KR20000006368(A) 申请公布日期 2000.01.25
申请号 KR19990023628 申请日期 1999.06.23
申请人 HITACHI.LTD. 发明人 YOKOGAWAGENEZE;IJAWAMASARU;ITABASINAOSI;NEGISINOBUYUKI;TACHISINICHI
分类号 H01L21/302;C23F4/00;H01J37/32;H01L21/3065;H01L21/311;H01L21/3213;H05H1/46;(IPC1-7):H01L21/306 主分类号 H01L21/302
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