发明名称 |
CO SENSOR AND METHOD OF FABRICATING THE SAME |
摘要 |
PURPOSE: CO sensor and method of fabricating the same is provided to prevent that the CO sensor resistance increase as a time and to increase the dependence of CO concentration of CO sensor resistance. CONSTITUTION: In the CO sensor, CO sensor using SnO2 group oxide semiconductor is agglomerated, Ir and Pt is added with weight rate 1-1/5. a mixing solution of Ir and Pt is impregnated and dissolve through pyrolysis, and added. An aqueous solution containing a thio component is impregnated in SnO2 sinter. The thio component is added in the SnO2 sinter. Temperature-humidity dependency of the CO sensor is controlled, and dependency of the CO concentration is increased.
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申请公布号 |
KR20000006215(A) |
申请公布日期 |
2000.01.25 |
申请号 |
KR19990022491 |
申请日期 |
1999.06.16 |
申请人 |
HWIKAROKIKEN KABISHIKIKAISHA |
发明人 |
OZAKIYASTAKA;SUZKISACHIYO |
分类号 |
G01N27/407;G01N27/12;G01N33/00;(IPC1-7):G01N27/407 |
主分类号 |
G01N27/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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