| 摘要 |
PROBLEM TO BE SOLVED: To attain a high film formation rate, to enable film formation in a uniform film thickness and to enhance adhesive strength by carrying out sputtering using a target comprising a Ge-Si sintered compact contg. a specified total amt. of one or more selected from B, In and Ga and a specified total amt. of one or more selected from oxygen, nitrogen and carbon. SOLUTION: The target comprises a Ge-Si sintered compact contg. 0.5-95 wt.% Si, 0.00005-1.0 wt.% one or more selected from B, In and Ga and 0.0001-1.0 wt.% one or more selected from oxygen, nitrogen and carbon. B, In and Ga convert a thin Ge-Si film into a p-type one, remarkably increase sputtering rate and enable the increase of film formation rate and the uniformization of film thickness over a large area. Oxygen, nitrogen and carbon enhance adhesive strength to a thin oxide film on an Si wafer as a substrate and reduce local unevenness in adhesive strength even in the case of an enlarged film formation area.
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