METHOD FOR MANUFACTURING TRIPLE WELL OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method of triple well is provided to minimize a damage of substrate and simplify manufacturing process by using a cell-well mask including N-well and R-well of the cell region. CONSTITUTION: The method comprises the steps of sequentially forming a pad oxide(11) and a nitride pattern(12) on a semiconductor substrate(10) having a cell region and a peripheral region; forming a cell-well mask(13) to expose a portion of N-well having R-well of the cell region; forming an N-well implanting region(14) in the exposed substrate; removing the cell-well mask(13), forming an isolating oxide(15) by oxidation of the exposed substrate and forming an N-well(14-1) by diffusing impurities of the N-well implantation region(14); removing the nitride pattern(12) and the pad oxide(11) and forming a peri-well mask(16) to expose a portion of N-well including R-well of the peripheral region; forming an N-well implanting region(17); removing the peri-well mask and forming a P-well mask to expose a portion of P-well having R-well; and forming an R-well implanting region(18) and a P-well implanting region(19).