发明名称 CIRCUIT FOR GENERATING INTERNAL VOLTAGE
摘要 PURPOSE: A circuit for generating an internal voltage is provided to reduce a voltage unnecessarily consumed. CONSTITUTION: The circuit for generating an internal voltage provided to an input buffer circuit portion and an internal operation circuit portion of a semiconductor memory device comprises: a first internal voltage generation circuit portion(21) for supplying a supply voltage to a circuit portion operating without an external signal by generating the internal voltage lower than the external supply voltage by a predetermined level; a second internal voltage generation circuit portion(22) for generating the internal voltage when an input buffer circuit portion for buffering another external signal operates only; and a control circuit portion(27) for generating a signal which simultaneously controls activation of the input buffer circuit portion and the second internal voltage generation circuit portion under control of a clock enable signal.
申请公布号 KR20000004514(A) 申请公布日期 2000.01.25
申请号 KR19980025958 申请日期 1998.06.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 KIM, JUN HO;KIM, JONG DEOK
分类号 H03K19/00;(IPC1-7):H03K19/00 主分类号 H03K19/00
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