SEPARATING METHOD OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE: A separating method of semiconductor element is provided to electrically separate between elements CONSTITUTION: The separating method of semiconductor element comprises: a step sequentially forming a pad oxidation film and a nitride film on a silicon substrate; a step exposing the field area of the silicon substrate by etching the portion of the oxidation film and nitration film; a step forming a trench having prescribed depth by etching the exposed field area of the silicon substrate; a step forming a nitrate film having prescribed depth over all structure; a step depositing a thick oxidation film on the nitrate film to bury the trench; a step etching the oxidation film and nitration film until the nitration film is exposed; and a step removing the nitride film and the pad oxidation film under it.