METHOD FOR MANUFACTURING A GATE ELECTRODE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method of a gate electrode having W-polycide structure is provided to improve a GOI(gate oxide integrity) of devices by forming a conductive tungsten nitride by RF(radio frequency) plasma using WF6 and N2 as a diffusion preventing layer. CONSTITUTION: The method comprises the steps of: sequentially forming a gate oxide layer(11) and a doped polysilicon layer(12) on a semiconductor substrate(10); forming a tungsten nitride layer(13) on the doped polysilicon layer(12) by RF PECVD(plasma enhanced CVD) method using WF6 and N2 gas as the diffusion preventing layer; forming a tungsten silicide layer(14) on the tungsten nitride layer(13); and annealing the resultant structure.