发明名称 SEMICONDUCTOR MEMORY CELL, SEMICONDUCTOR MEMORY ARRAY AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A semiconductor memory cell is provided to reduce a junction capacitance and a dopant concentration in a device. CONSTITUTION: The semiconductor memory cell comprises a storage capacitor(12) and a transfer element(22). The storage capacitor(12) is formed in a trench(14). The trench(14) is formed etching a substrate(11) inward. The transfer element(22) is extended along a many part of an arc around outside trench, and is formed in an electrically-isolated mesa region(18). And, the transfer element has a contact part connecting electrically and mutually with the trench.
申请公布号 KR20000005907(A) 申请公布日期 2000.01.25
申请号 KR19990020591 申请日期 1999.06.04
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT 发明人 HOENIG SUMID HAINZ;SHURUISRU-CHEN;MANDELMANJAKALRAN
分类号 H01L27/10;H01L21/8242;H01L27/108;(IPC1-7):H01L27/10 主分类号 H01L27/10
代理机构 代理人
主权项
地址