发明名称 |
SEMICONDUCTOR MEMORY CELL, SEMICONDUCTOR MEMORY ARRAY AND FABRICATION METHOD THEREOF |
摘要 |
PURPOSE: A semiconductor memory cell is provided to reduce a junction capacitance and a dopant concentration in a device. CONSTITUTION: The semiconductor memory cell comprises a storage capacitor(12) and a transfer element(22). The storage capacitor(12) is formed in a trench(14). The trench(14) is formed etching a substrate(11) inward. The transfer element(22) is extended along a many part of an arc around outside trench, and is formed in an electrically-isolated mesa region(18). And, the transfer element has a contact part connecting electrically and mutually with the trench.
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申请公布号 |
KR20000005907(A) |
申请公布日期 |
2000.01.25 |
申请号 |
KR19990020591 |
申请日期 |
1999.06.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HOENIG SUMID HAINZ;SHURUISRU-CHEN;MANDELMANJAKALRAN |
分类号 |
H01L27/10;H01L21/8242;H01L27/108;(IPC1-7):H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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